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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM2108JPT CURRENT 9.5 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * N-Channel Enhancement 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 D1 D1 D2 D2 5 1 4 S1 G1 S2 G2 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM2108JPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 20 V V 20 9.5 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 35 2000 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W 2005-02 RATING CHARACTERISTIC CURVES ( CHM2108JPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 20 V, VGS = 0 V VGS = 12V,VDS = 0 V VGS = -12V, VDS = 0 V 20 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=4.5V, ID=10A VGS=2.5V, ID=8A 0.6 11 14 16 1.3 14 V m 20 S Forward Transconductance VDS =10V, ID = 10A Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0 MHz 2800 520 380 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=15V, ID=10A VGS=5V V DD= 10V ID = 1.0A , VGS = 10 V RGEN= 6 31 4.6 10 17 16 68 31 40 nC ton 35 33 140 60 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) 2.3 1.2 A V Drain-Source Diode Forward Voltage IS = 2.3A , VGS = 0 V RATING CHARACTERISTIC CURVES ( CHM4808JPT ) Typical Electrical Characteristics 25 VGS=10,8,6,5V 50 ID, Drain Current (A) 15 ID, Drain Current (A) 20 VGS=4V 40 30 10 20 25 C 10 TJ=125 C -55 C 2 3 4 VGS=3V 5 0 0 1 2 3 4 0 1 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics VGS, Gate to Source Voltage (V) 8 6 4 2 0 0 5 10 15 20 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 10 V =15V DS ID=12A ID=12A VGS=10V -50 0 50 100 150 200 Qg, Total Gate Charge (nC) Figure 3. Gate Charge VTH, Normalized Gate-Source Threshold Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS ID=250A TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature |
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